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| 1N4153, Silicon Switching Diode 1N4150 DO-35 Glass Package Applications 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features Six sigma quality Metallurgically bonded BKC's Sigma BondTM plating 1.0" for problem free solderability 25.4 mm (Min.) LL-34/35 MELF SMD available Full approval to Mil-S-19500/337 Available up to JANTXV-1 levels "S" level screening available to SCDs Maximum Ratings Peak Inverse Voltage Average Rectified Current Continuous Forward Current Peak Surge Current (tpeak = 1 Sec.) BKC Power Dissipation TL = 50 oC, L = 3/8" from body Operating and Storage Temperature Range Electrical Characteristics @ 25 oC* Symbol Forward Voltage @ IF = 100 A VF Vf Vf Forward Voltage @ IF = 250 A VF Forward Voltage @ IF = 1.0 mA VF Vf Forward Voltage @ IF = 2.0 mA VF Vf VF Forward Voltage @ IF = 10 mA Forward Voltage @ IF = 20 mA VF Reverse Leakage Current @ VR = 50 V IR PIV Breakdown Voltage @ IR = 5.0 A Capacitance @ VR = 0 V, f = 1mHz CT DO-35 Glass Package La dDa . e i 0. 1 - . 2 " 0 80 0 2 0. 5 - . 5 m m 4 80 5 8 Length 0.120-.200" 3.05-5.08- m Dia. 0.06-0.09" m 15 - . 8m m . 322 Symbol PIV IAvg IFdc Ipeak Ptot TOp & St Value 75 (Min.) 150 300 0.25 500 -65 to +200 Maximum 0.55 0.59 0.67 0.70 0.81 0.88 0.05(50 @ 150 oC) Unit Volts mAmps mAmps Amp mWatts o C Minimum 0.49 0.53 0.59 0.62 0.70 0.74 75 Unit Volts Volts Volts Volts Volts Volts A Volts pF 2.0 Reverse Recovery Time (note 1) Reverse Recovery Time (note 2) trr trr 4.0 2.0 nSecs nSec Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. *Unless Otherwise Specified Note2: Per Method 4031-A with IF = IR = 10 mA, Rr = 6 Volts, Rl=100 ohms. 6 Lake Street - Lawrence, MA 01841 |
Price & Availability of JANTXV1N4153-1
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